Shallow NV centers augmented by exploiting n-type diamond

Creation of nitrogen-vacancy (NV) centers at the nanoscale surface region in diamond, while retaining their excellent spin and optical properties, is essential for applications quantum technology. Here, we demonstrate extension spin-coherence time (T2), stabilization charge state, an improvement creation yield NV formed by ion-implantation technique a depth ?15 nm phosphorus-doped n-type diamond. The longest T2 about 580 ?s shallow center approaches one bulk diamond limited nuclear spins natural abundant 13C. averaged over 1.7 times longer than that pure non-doped Moreover, state more twofold are confirmed. enhancements diamond-semiconductor significant future integrated devices.